A memory system and method are described. For example, a memory cell includes a capacitance and an access circuit in association with the capacitance and having an access circuit terminal. The memory cell further includes a voltage control unit to adjust a potential at the access circuit terminal in a retention state such that a retention time of the memory cell is increased. A method of operating a memory cell includes, for example, adjusting a potential at an access circuit terminal of the memory cell to increase a retention time.