Invention Grant
- Patent Title: Vertical cavity surface emitting laser and method for manufacturing the same
- Patent Title (中): 垂直腔表面发射激光器及其制造方法
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Application No.: US12076791Application Date: 2008-03-24
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Publication No.: US07675956B2Publication Date: 2010-03-09
- Inventor: Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
- Applicant: Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2007-081153 20070327
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A Vertical Cavity Surface Emitting Laser capable of being easily and inexpensively manufactured and stabilizing the polarization direction of laser light in one direction is provided. The VCSEL includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflectors, in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.
Public/Granted literature
- US20080240194A1 Vertical cavity surface emitting laser and method of manufacturing it Public/Granted day:2008-10-02
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