Invention Grant
- Patent Title: Error detection, documentation, and correction in a flash memory device
- Patent Title (中): 闪存设备中的错误检测，文档和更正
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Application No.: US11444705Application Date: 2006-06-01
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Publication No.: US07676710B2Publication Date: 2010-03-09
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
A memory device has an error documentation memory array that is separate from the primary memory array. The error documentation memory array stores data relating to over-programmed bits in the primary array. When the over-programmed bits in the primary array are erased, the error documentation memory array is erased as well, deleting the documentation data relating to the over-programmed bits.
Public/Granted literature
- US20060236207A1 Error detection, documentation, and correction in a flash memory device Public/Granted day:2006-10-19
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