Invention Grant
- Patent Title: Substrate cleaning method
- Patent Title (中): 基材清洗方法
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Application No.: US11470353Application Date: 2006-09-06
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Publication No.: US07678199B2Publication Date: 2010-03-16
- Inventor: Shogo Mizota , Minami Teruomi , Kenji Yokomizo , Taira Masaki
- Applicant: Shogo Mizota , Minami Teruomi , Kenji Yokomizo , Taira Masaki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: B08B3/04
- IPC: B08B3/04

Abstract:
A method is provided for reducing the amount of film fragments discharged into a processing liquid circulation system during removal of films from wafers, thereby reducing the frequency of filter cleaning or filter replacement. The method includes exposing a wafer containing a film formed thereon in a process chamber of a substrate processing system to a processing liquid, where the wafer is not rotated or is rotated at a first speed and the processing liquid is discharged from the process chamber to a processing liquid circulation system. Subsequently, exposure of the wafer to the processing liquid is discontinued and the wafer is rotated at a second speed greater than the first speed to centrifugally remove fragments of the film from the wafer. Next, the wafer is exposed to the same or a different processing liquid and the processing liquid is discharged from the process chamber to a processing liquid drain.
Public/Granted literature
- US20080053489A1 SUBSTRATE CLEANING METHOD Public/Granted day:2008-03-06
Information query
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