Invention Grant
- Patent Title: Technique on ozone water for use in cleaning semiconductor substrate
- Patent Title (中): 用于清洁半导体衬底的臭氧水技术
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Application No.: US10522717Application Date: 2003-08-11
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Publication No.: US07678200B2Publication Date: 2010-03-16
- Inventor: Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
- Applicant: Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
- Applicant Address: JP Tokyo JP Tokyo JP Tokyo
- Assignee: Sumitomo Mitsubishi Silicon Corporation,Chlorine Engineers Corp. Ltd.,Echo Giken Co. Ltd.
- Current Assignee: Sumitomo Mitsubishi Silicon Corporation,Chlorine Engineers Corp. Ltd.,Echo Giken Co. Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo JP Tokyo
- Agency: Kubovcik & Kubovcik
- Priority: JP2002-235425 20020813
- International Application: PCT/JP03/10254 WO 20030811
- International Announcement: WO2004/016723 WO 20040226
- Main IPC: B08B3/00
- IPC: B08B3/00

Abstract:
An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above organic carbon to an ultra-pure ozone water containing a trace amount of the organic carbon. The above ultra-pure ozone water exhibits an increased half-life period of ozone, and thus, when used in cleaning a semiconductor substrate, allows the cleaning with an ozone water having an enhanced content of ozone, which results in exhibiting an enhanced cleaning capability and cleaning efficiency for an organic impurities, metallic impurities and the like adhered to the substrate, due to enhanced oxidizing action of ozone.
Public/Granted literature
- US20060154837A1 Technique on ozone water for use in cleaning semiconductor substrate Public/Granted day:2006-07-13
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