Invention Grant
- Patent Title: Void-free damascene copper deposition process and means of monitoring thereof
- Patent Title (中): 无空隙镶嵌铜沉积工艺及其监控手段
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Application No.: US10615794Application Date: 2003-07-10
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Publication No.: US07678258B2Publication Date: 2010-03-16
- Inventor: Panayotis Andricacos , Dean S. Chung , Hariklia Deligianni , James E. Fluegel , Keith T. Kwietniak , Peter S. Locke , Darryl D. Restaino , Soon-Cheon Seo , Philippe M. Vereecken , Erick G. Walton
- Applicant: Panayotis Andricacos , Dean S. Chung , Hariklia Deligianni , James E. Fluegel , Keith T. Kwietniak , Peter S. Locke , Darryl D. Restaino , Soon-Cheon Seo , Philippe M. Vereecken , Erick G. Walton
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Connolly Bove Lodge & Hutz LLP
- Agent Louis J. Percello, Esq.
- Main IPC: C25D5/00
- IPC: C25D5/00
Abstract:
An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.
Public/Granted literature
- US20050006242A1 Void-free damascene copper deposition process and means of monitoring thereof Public/Granted day:2005-01-13
Information query
