Invention Grant
- Patent Title: Tantalum carbide nitride materials by vapor deposition processes
- Patent Title (中): 通过气相沉积工艺生产氮化钽材料
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Application No.: US11860952Application Date: 2007-09-25
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Publication No.: US07678298B2Publication Date: 2010-03-16
- Inventor: Kavita Shah , Haichun Yang , Schubert S. Chu
- Applicant: Kavita Shah , Haichun Yang , Schubert S. Chu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 Ω/sq to about 1×106 Ω/sq.
Public/Granted literature
- US20090078916A1 TANTALUM CARBIDE NITRIDE MATERIALS BY VAPOR DEPOSITION PROCESSES Public/Granted day:2009-03-26
Information query
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