Invention Grant
US07678411B2 Method of forming wiring pattern and method of forming gate electrode for TFT 有权
形成布线图案的方法和形成TFT的栅电极的方法

Method of forming wiring pattern and method of forming gate electrode for TFT
Abstract:
The invention provides a method of forming a wiring pattern in which a conductive material layer is formed in a pattern formation region having a first region, which is bordered by a bank pattern and has a first width, and a second region, which touches the first region and has a second width smaller than the first width, on a substrate, by discharging a droplet of a conductive material in a liquid phase using a droplet discharge device. The method includes forming the conductive material layer to cover the first region and the second region, by discharging the droplet having a diameter smaller than the first width and greater than the second width toward the first region. In this case, the droplet is discharged such that the droplet lands at a position that faces a boundary line between the first region and the second region.
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