Invention Grant
- Patent Title: Reflective-type mask blank for EUV lithography
- Patent Title (中): EUV光刻用反射型掩模板
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Application No.: US11330205Application Date: 2006-01-12
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Publication No.: US07678511B2Publication Date: 2010-03-16
- Inventor: Yoshiaki Ikuta , Toshiyuki Uno , Ken Ebihara
- Applicant: Yoshiaki Ikuta , Toshiyuki Uno , Ken Ebihara
- Applicant Address: JP Tokyo
- Assignee: Asahi Glass Company, Limited
- Current Assignee: Asahi Glass Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate.A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.
Public/Granted literature
- US20070160916A1 Reflective-type mask blank for EUV lithography Public/Granted day:2007-07-12
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