Invention Grant
- Patent Title: Method of forming an acceleration sensor
- Patent Title (中): 形成加速度传感器的方法
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Application No.: US11336478Application Date: 2006-01-20
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Publication No.: US07678601B2Publication Date: 2010-03-16
- Inventor: Hiroyuki Tomomatsu , Kazuhiko Watanabe , Tetsuya Tada , Toshiyuki Tani
- Applicant: Hiroyuki Tomomatsu , Kazuhiko Watanabe , Tetsuya Tada , Toshiyuki Tani
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of forming a MEMS structure over active circuitry in a semiconductor body includes forming active circuitry in a semiconductor body, and forming the MEMS structure over the active circuitry, wherein at least a portion of the MEMS structure spatially overlaps the active circuitry.
Public/Granted literature
- US20070172975A1 Semiconductor device and fabrication method thereof Public/Granted day:2007-07-26
Information query
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