Invention Grant
- Patent Title: Phase change memory device and fabrication method thereof
- Patent Title (中): 相变存储器件及其制造方法
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Application No.: US11850019Application Date: 2007-09-04
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Publication No.: US07678606B2Publication Date: 2010-03-16
- Inventor: Frederick T Chen
- Applicant: Frederick T Chen
- Applicant Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nanya Technology Corporation,ProMOS Technologies Inc.,Winbond Electronics Corp.
- Current Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nanya Technology Corporation,ProMOS Technologies Inc.,Winbond Electronics Corp.
- Current Assignee Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Agency: Quintero Law Office
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
A phase change memory device is disclosed. A second conductive spacer is under a first conductive spacer. A phase change layer comprises a first portion substantially parallel to the first and second conductive spacers and a second portion on top of the second conductive spacer, wherein the second conductive spacer is electrically connected to the first conductive spacer through the second portion of the phase change layer.
Public/Granted literature
- US20090057643A1 PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2009-03-05
Information query
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