Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11898973Application Date: 2007-09-18
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Publication No.: US07678612B2Publication Date: 2010-03-16
- Inventor: Tomoharu Fujii , Kiyoshi Oi
- Applicant: Tomoharu Fujii , Kiyoshi Oi
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP.2006-252999 20060919
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing a semiconductor device includes: a step of forming a via plug erected on an electrically conductive layer, and embedding the via plug in an insulation layer to form a wiring structure; and a step of bonding the wiring structure to a wiring substrate including electronic components mounted thereon.
Public/Granted literature
- US20080076249A1 Method of manufacturing semiconductor device Public/Granted day:2008-03-27
Information query
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