Invention Grant
- Patent Title: Method of manufacturing a thin film transistor matrix substrate
- Patent Title (中): 制造薄膜晶体管矩阵基板的方法
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Application No.: US11359947Application Date: 2006-02-22
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Publication No.: US07678619B2Publication Date: 2010-03-16
- Inventor: Liu-Chung Lee
- Applicant: Liu-Chung Lee
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Priority: TW94128098A 20050817
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
A method of manufacturing a thin film transistor matrix substrate is provided. The first photo-mask process is used to define a gate electrode and a signal electrode. The second photo-mask process is used to obtain different thickness of a PR layer in different regions for forming a channel, gate electrode through holes, signal electrode through holes and conductive pads. The third photo-mask process is used to define a source, a drain, an upper signal electrode, a pixel electrode, gate electrode pads and signal electrode pads.
Public/Granted literature
- US20070042537A1 Method of manufacturing a thin film transistor matrix substrate Public/Granted day:2007-02-22
Information query
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