Semiconductor method and device with mixed orientation substrate

Invention Grant

US07678622B2 Semiconductor method and device with mixed orientation substrate 有权

Title translation: 具有混合取向衬底的半导体方法和器件

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Patent Title: Semiconductor method and device with mixed orientation substrate
Patent Title (中): 具有混合取向衬底的半导体方法和器件
Application No.: US11868001

Application Date: 2007-10-05
Publication No.: US07678622B2

Publication Date: 2010-03-16
Inventor: Jiang Yan , Chun-Yung Sung , Danny Pak-Chum Shum , Alois Gutmann
Applicant: Jiang Yan , Chun-Yung Sung , Danny Pak-Chum Shum , Alois Gutmann
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/84
IPC: H01L21/84

Semiconductor method and device with mixed orientation substrate

Abstract:

In a method of forming a semiconductor device, a wafer includes a first semiconductor region of a first crystal orientation and a second semiconductor region of a second crystal orientation. Insulating material is formed over the wafer. A first portion of the insulating material is removed to expose the first semiconductor region and a second portion of the insulating material is removed to expose the second semiconductor region. Semiconductor material of the first crystal orientation is epitaxially grown over the exposed first semiconductor region and semiconductor material of the second crystal orientation is epitaxially grown over the exposed second semiconductor region.

Abstract(Chinese):

在形成半导体器件的方法中，晶片包括第一晶体取向的第一半导体区域和第二晶体取向的第二半导体区域。在晶片上形成绝缘材料。除去绝缘材料的第一部分以暴露第一半导体区域，并且去除绝缘材料的第二部分以暴露第二半导体区域。在暴露的第一半导体区域上外延生长第一晶体取向的半导体材料，并且在暴露的第二半导体区域上外延生长第二晶体取向的半导体材料。

Public/Granted literature

US20080026520A1 Semiconductor Method and Device with Mixed Orientation Substrate Public/Granted day:2008-01-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体