Invention Grant
- Patent Title: MuGFET with increased thermal mass
- Patent Title (中): MuGFET具有增加的热质量
-
Application No.: US11561170Application Date: 2006-11-17
-
Publication No.: US07678632B2Publication Date: 2010-03-16
- Inventor: Harald Gossner , Christian Russ , Jens Schneider , Thomas Schulz
- Applicant: Harald Gossner , Christian Russ , Jens Schneider , Thomas Schulz
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
Some embodiments discussed herein include a semiconductor having a source region, a drain region and an array of fins operatively coupled to a gate region controlling current flow through the fins between the source region and the drain region. The semiconductor also has at least one cooling element formed at least in part of a material having a heat capacity equal to or larger than the heat capacity of the material of the source region, drain region and array of fins, the cooling elements being in close vicinity to fins of the array of fins electrically isolated from the fins of the array, the source region and the drain region. Other embodiments are also disclosed.
Public/Granted literature
- US20080116515A1 MUGFET WITH INCREASED THERMAL MASS Public/Granted day:2008-05-22
Information query
IPC分类: