Invention Grant
- Patent Title: Deep STI trench and SOI undercut enabling STI oxide stressor
- Patent Title (中): 深STI沟槽和SOI底切使STI氧化应激反应
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Application No.: US11716058Application Date: 2007-03-07
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Publication No.: US07678665B2Publication Date: 2010-03-16
- Inventor: Michael D. Turner , Suresh Venkatesan , Kurt H. Junker
- Applicant: Michael D. Turner , Suresh Venkatesan , Kurt H. Junker
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Fortkort & Houston P.C.
- Agent John A. Fortkort
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/06
Abstract:
A method for imparting stress to the channel region of a transistor is provided. In accordance with the method, a semiconductor layer (307) is provided which has a dielectric layer (305) disposed beneath it. A trench (319) is created which extends through the semiconductor layer and into the dielectric layer, and the trench is backfilled with a stressor material (320), thereby forming a trench isolation structure. A channel region (326) is defined in the semiconductor layer adjacent to the trench isolation structure.
Public/Granted literature
- US20080220617A1 Deep STI trench and SOI undercut enabling STI oxide stressor Public/Granted day:2008-09-11
Information query
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