Invention Grant
US07678678B2 Method to chemically remove metal impurities from polycide gate sidewalls
有权
从多孔化合物侧壁化学去除金属杂质的方法
- Patent Title: Method to chemically remove metal impurities from polycide gate sidewalls
- Patent Title (中): 从多孔化合物侧壁化学去除金属杂质的方法
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Application No.: US11494844Application Date: 2006-07-28
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Publication No.: US07678678B2Publication Date: 2010-03-16
- Inventor: Fernando Gonzalez , Don Carl Powell
- Applicant: Fernando Gonzalez , Don Carl Powell
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment also relates to a system that achieves the process. An embodiment also relates to a gate stack structure that provides a composition that resists the redeposition of metal during processing and field use.
Public/Granted literature
- US20060261500A1 Method to chemically remove metal impurities from polycide gate sidewalls Public/Granted day:2006-11-23
Information query
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