Semiconductor device with reduced contact resistance

Invention Grant

US07678680B2 Semiconductor device with reduced contact resistance 有权

Title translation: 具有降低接触电阻的半导体器件

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Patent Title: Semiconductor device with reduced contact resistance
Patent Title (中): 具有降低接触电阻的半导体器件
Application No.: US11144483

Application Date: 2005-06-02
Publication No.: US07678680B2

Publication Date: 2010-03-16
Inventor: Sven Fuchs , Mark Pavier
Applicant: Sven Fuchs , Mark Pavier
Applicant Address: US CA El Segundo
Assignee: International Rectifier Corporation
Current Assignee: International Rectifier Corporation
Current Assignee Address: US CA El Segundo
Agency: Farjami & Farjami LLP
Main IPC: H01L21/44
IPC: H01L21/44

Semiconductor device with reduced contact resistance

Abstract:

A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract(Chinese):

一种半导体器件，其包括在电极上形成的一种材料的电极和具有较低电阻率的导电材料，以及制造该半导体器件的工艺。

Public/Granted literature

US20050272257A1 Semiconductor device with reduced contact resistance Public/Granted day:2005-12-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的