Invention Grant
- Patent Title: Plasma semiconductor processing system and method
- Patent Title (中): 等离子体半导体处理系统及方法
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Application No.: US09898439Application Date: 2001-07-05
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Publication No.: US07678705B2Publication Date: 2010-03-16
- Inventor: Tue Nguyen , Tai Dung Nguyen
- Applicant: Tue Nguyen , Tai Dung Nguyen
- Applicant Address: US CA Petaluma
- Assignee: Tegal Corporation
- Current Assignee: Tegal Corporation
- Current Assignee Address: US CA Petaluma
- Agency: Fliesler Meyer LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
An apparatus to perform semiconductor processing includes a process chamber; a plasma generator for generating a plasma in the process chamber; and a helical ribbon electrode coupled to the output of the plasma generator.
Public/Granted literature
- US20030008500A1 Plasma semiconductor processing system and method Public/Granted day:2003-01-09
Information query
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