Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11780585Application Date: 2007-07-20
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Publication No.: US07678706B2Publication Date: 2010-03-16
- Inventor: Yoshinori Miyaki , Hiromichi Suzuki , Kazunari Suzuki , Takafumi Nishita , Fujio Ito , Kunihiro Tsubosaki , Akihiko Kameoka , Kunihiko Nishi
- Applicant: Yoshinori Miyaki , Hiromichi Suzuki , Kazunari Suzuki , Takafumi Nishita , Fujio Ito , Kunihiro Tsubosaki , Akihiko Kameoka , Kunihiko Nishi
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- Current Assignee: Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.
Public/Granted literature
- US20070298545A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2007-12-27
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