Invention Grant
- Patent Title: Systems and methods for forming metal oxide layers
- Patent Title (中): 用于形成金属氧化物层的系统和方法
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Application No.: US12352775Application Date: 2009-01-13
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Publication No.: US07678708B2Publication Date: 2010-03-16
- Inventor: Brian A. Vaartstra , Timothy A. Quick
- Applicant: Brian A. Vaartstra , Timothy A. Quick
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Public/Granted literature
- US20090149033A1 SYSTEMS AND METHODS FOR FORMING METAL OXIDE LAYERS Public/Granted day:2009-06-11
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