Invention Grant
- Patent Title: Semiconductor device, and method and apparatus for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法和装置
-
Application No.: US11147212Application Date: 2005-06-08
-
Publication No.: US07678711B2Publication Date: 2010-03-16
- Inventor: Mitsuaki Hori , Hiroyuki Ohta , Katsuaki Ookoshi
- Applicant: Mitsuaki Hori , Hiroyuki Ohta , Katsuaki Ookoshi
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2004-001011 20040106; JP2004-277321 20040924
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A SiO2 film is formed on a semiconductor substrate. Then, a SiN film is formed on the SiO2 film. In this event bis(tertiary butyl amino) silane and NH3 are used as a material gas, and the film forming temperature is set to 600° C. or lower.
Public/Granted literature
- US20050236679A1 Semiconductor device, and method and apparatus for manufacturing the same Public/Granted day:2005-10-27
Information query
IPC分类:
