Invention Grant
- Patent Title: Vapor phase treatment of dielectric materials
- Patent Title (中): 介电材料的气相处理
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Application No.: US11086010Application Date: 2005-03-22
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Publication No.: US07678712B2Publication Date: 2010-03-16
- Inventor: Anil S. Bhanap , Robert R. Roth , Kikue S. Burnham , Brian J. Daniels , Denis H. Endisch , Ilan Golecki
- Applicant: Anil S. Bhanap , Robert R. Roth , Kikue S. Burnham , Brian J. Daniels , Denis H. Endisch , Ilan Golecki
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International, Inc.
- Current Assignee: Honeywell International, Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Roberts & Roberts, L.L.P.
- Agent Richard S. Roberts
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.
Public/Granted literature
- US20060216952A1 Vapor phase treatment of dielectric materials Public/Granted day:2006-09-28
Information query
IPC分类:
