Invention Grant
- Patent Title: Low wet etch rate silicon nitride film
- Patent Title (中): 低湿蚀刻速率氮化硅膜
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Application No.: US11962674Application Date: 2007-12-21
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Publication No.: US07678715B2Publication Date: 2010-03-16
- Inventor: Hemant P. Mungekar , Jing Wu , Young S. Lee , Anchuan Wang
- Applicant: Hemant P. Mungekar , Jing Wu , Young S. Lee , Anchuan Wang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C14/08
Abstract:
The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
Public/Granted literature
- US20090163041A1 LOW WET ETCH RATE SILICON NITRIDE FILM Public/Granted day:2009-06-25
Information query
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