Invention Grant
- Patent Title: Thin-film photoelectric converter
- Patent Title (中): 薄膜光电转换器
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Application No.: US10543516Application Date: 2004-05-28
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Publication No.: US07678992B2Publication Date: 2010-03-16
- Inventor: Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
- Applicant: Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
- Applicant Address: JP Osaka
- Assignee: Kaneka Corporation
- Current Assignee: Kaneka Corporation
- Current Assignee Address: JP Osaka
- Agency: Hogan & Hartson LLP
- Priority: JP2003-174423 20030619
- International Application: PCT/JP2004/007803 WO 20040528
- International Announcement: WO2004/114417 WO 20041229
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
Public/Granted literature
- US20060097259A1 Thin-film photoelectric converter Public/Granted day:2006-05-11
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