Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US11253748Application Date: 2005-10-20
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Publication No.: US07679097B2Publication Date: 2010-03-16
- Inventor: Kazuyuki Akaishi
- Applicant: Kazuyuki Akaishi
- Applicant Address: JP Anan-Shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-Shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPP2004-306501 20041021
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light emitting device having a semiconductor stacking structure bonded onto the support member and having excellent characteristics is provided by a preferable electrode structure.The semiconductor light emitting device comprising; a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of the first electrode has a portion that makes contact with the first semiconductor layer so as to establish electrical continuity and an external connection section.
Public/Granted literature
- US20060124954A1 Semiconductor light emitting device and method for manufacturing the same Public/Granted day:2006-06-15
Information query
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