Invention Grant
US07679097B2 Semiconductor light emitting device and method for manufacturing the same 有权
半导体发光器件及其制造方法

Semiconductor light emitting device and method for manufacturing the same
Abstract:
A semiconductor light emitting device having a semiconductor stacking structure bonded onto the support member and having excellent characteristics is provided by a preferable electrode structure.The semiconductor light emitting device comprising; a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of the first electrode has a portion that makes contact with the first semiconductor layer so as to establish electrical continuity and an external connection section.
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