Invention Grant
- Patent Title: Structure of strained silicon on insulator and method of manufacturing the same
- Patent Title (中): 绝缘子上的应变硅的结构及其制造方法
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Application No.: US12003040Application Date: 2007-12-19
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Publication No.: US07679140B2Publication Date: 2010-03-16
- Inventor: Young-soo Park , Wenxu Xianyu , Takashi Noguchi
- Applicant: Young-soo Park , Wenxu Xianyu , Takashi Noguchi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2004-0103111 20041208
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.
Public/Granted literature
- US20080099875A1 Structure of strained silicon on insulator and method of manufacturing the same Public/Granted day:2008-05-01
Information query
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