Invention Grant
US07679142B2 Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device
失效
半导体晶片，半导体器件及半导体器件的制造方法
- Patent Title: Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device
- Patent Title (中): 半导体晶片，半导体器件及半导体器件的制造方法
-
Application No.: US11399603Application Date: 2006-04-07
-
Publication No.: US07679142B2Publication Date: 2010-03-16
- Inventor: Tatsuya Ohguro
- Applicant: Tatsuya Ohguro
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2005-145592 20050518
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
A semiconductor wafer includes a semiconductor bulk; a first insulating layer formed on the semiconductor bulk; a first semiconductor layer formed on the first insulating layer; a second insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the second insulating layer.
Public/Granted literature
- US20060261410A1 Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device Public/Granted day:2006-11-23
Information query
IPC分类:
