Invention Grant
- Patent Title: Multiple magneto-resistance devices based on doped magnesium oxide
- Patent Title (中): 基于掺杂氧化镁的多个磁阻器件
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Application No.: US12223534Application Date: 2007-02-08
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Publication No.: US07679155B2Publication Date: 2010-03-16
- Inventor: Vladislav Korenivski
- Applicant: Vladislav Korenivski
- Applicant Address: SE Vallentuna
- Assignee: VNK Innovation AB
- Current Assignee: VNK Innovation AB
- Current Assignee Address: SE Vallentuna
- Agency: Foley & Lardner LLP
- Priority: SE0600305 20060210
- International Application: PCT/SE2007/050078 WO 20070208
- International Announcement: WO2007/091971 WO 20070816
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/00 ; H01L41/16
Abstract:
The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.
Public/Granted literature
- US20090067232A1 Multiple Magneto-Resistance Devices Based on Doped Magnesium Oxide Public/Granted day:2009-03-12
Information query
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