A thermal deformation preventing layer is located between a recording photoconductive layer, which contains a-Se as a principal constituent, and a crystallization preventing layer, which is constituted of an a-Se layer containing at least one kind of element selected from the group consisting of As, Sb, and Bi. The thermal deformation preventing layer is constituted of an a-Se layer containing at least one kind of specific substance selected from the group consisting of a metal fluoride, a metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5≦x≦1.5.