Invention Grant
- Patent Title: Phase-change memory element
- Patent Title (中): 相变存储元件
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Application No.: US11748440Application Date: 2007-05-14
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Publication No.: US07679163B2Publication Date: 2010-03-16
- Inventor: Frederick T Chen , Ming-Jinn Tsai
- Applicant: Frederick T Chen , Ming-Jinn Tsai
- Applicant Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nanya Technology Corporation,ProMOS Technologies Inc.,Winbond Electronics Corp.
- Current Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nanya Technology Corporation,ProMOS Technologies Inc.,Winbond Electronics Corp.
- Current Assignee Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Agency: Quintero Law Office
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/00
Abstract:
A phase-change memory element for reducing heat loss is disclosed. The phase-change memory element comprises a composite layer, wherein the composite layer comprises a dielectric material and a low thermal conductivity material. A via hole is formed within the composite layer. A phase-change material occupies at least one portion of the via hole. The composite layer comprises alternating layers or a mixture of the dielectric material and the low thermal conductivity material.
Public/Granted literature
- US20080283814A1 PHASE-CHANGE MEMORY ELEMENT Public/Granted day:2008-11-20
Information query
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