Invention Grant
- Patent Title: Semiconductor device having high cooling efficiency and method for manufacturing the same
- Patent Title (中): 具有高冷却效率的半导体装置及其制造方法
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Application No.: US11751694Application Date: 2007-05-22
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Publication No.: US07679184B2Publication Date: 2010-03-16
- Inventor: Hidetoshi Kusano , Kazuaki Yazawa
- Applicant: Hidetoshi Kusano , Kazuaki Yazawa
- Applicant Address: JP Tokyo
- Assignee: Sony Computer Entertainment Inc.
- Current Assignee: Sony Computer Entertainment Inc.
- Current Assignee Address: JP Tokyo
- Agency: Katten Muchin Rosenman LLP
- Priority: JP2006-155232 20060602
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A semiconductor device includes a substrate, a semiconductor chip flip-chip mounted on the substrate, a sealing resin layer sealing the surroundings of the semiconductor chip, and a heat sink bonded to the sealing resin layer through a TIM layer. In addition, a cooling medium is encapsulated in an enclosed space formed on the rear surface of the semiconductor chip.
Public/Granted literature
- US20070278667A1 Semiconductor Device having High Cooling Efficiency and Method for Manufacturing the Same Public/Granted day:2007-12-06
Information query
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