The semiconductor device, in which a flaking of a layer or an element is prevented, is provided. A bonding pad section 13 of a semiconductor device 1 includes a polysilicon film 131, a barrier metal film 133 provided on the polysilicon film 131 and a metallic electrode 134 provided on the barrier metal film 133. The surface roughness of the surface of the polysilicon film 131 in the side of the barrier metal film 133 is equal to or larger than 3 nm. Further, the polysilicon film 131 contains substantially no phosphorus.