Invention Grant
- Patent Title: Use of AIN as cooper passivation layer and thermal conductor
- Patent Title (中): 使用AIN作为铜钝化层和导热体
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Application No.: US11710924Application Date: 2007-02-27
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Publication No.: US07679193B2Publication Date: 2010-03-16
- Inventor: Allen McTeer
- Applicant: Allen McTeer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrate as well as from the copper layer.
Public/Granted literature
- US20070164442A1 Use of AIN as cooper passivation layer and thermal conductor Public/Granted day:2007-07-19
Information query
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