Invention Grant
- Patent Title: PAD structure and method of testing
- Patent Title (中): PAD结构和测试方法
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Application No.: US11556018Application Date: 2006-11-02
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Publication No.: US07679195B2Publication Date: 2010-03-16
- Inventor: Hsien-Wei Chen
- Applicant: Hsien-Wei Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
An interconnect structure includes: a plurality of dielectric layers having aligned process control monitor (PCM) pads, and a conductive structure above a topmost one of the PCM pads. The conductive structure electrically connects the topmost PCM pad to a device under test above a level of the topmost PCM pad. The conductive structure is sized and shaped so as to leave a majority portion of the topmost PCM pad exposed for access by a test probe.
Public/Granted literature
- US20070290371A1 PAD STRUCTURE AND METHOD OF TESTING Public/Granted day:2007-12-20
Information query
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