Invention Grant
- Patent Title: Semiconductor chip with crack stop
- Patent Title (中): 半导体芯片具有裂纹停止
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Application No.: US11853122Application Date: 2007-09-11
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Publication No.: US07679200B2Publication Date: 2010-03-16
- Inventor: Michael Z. Su , Jaime Bravo , Lei Fu , Jun Zhai
- Applicant: Michael Z. Su , Jaime Bravo , Lei Fu , Jun Zhai
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong, Mori & Steiner, P.C.
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
Various semiconductor chip crack stops and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor substrate that has a first corner defined by a first edge and a second edge. A crack stop is formed in the semiconductor substrate. The crack stop includes a first projection extending to the first edge and a second projection extending to the second edge to fence off a portion of the semiconductor substrate that includes the first corner.
Public/Granted literature
- US20090065952A1 Semiconductor Chip with Crack Stop Public/Granted day:2009-03-12
Information query
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