Invention Grant
- Patent Title: Parametric testline with increased test pattern areas
- Patent Title (中): 参数测试线具有增加的测试图案区域
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Application No.: US11811135Application Date: 2007-06-08
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Publication No.: US07679384B2Publication Date: 2010-03-16
- Inventor: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
- Applicant: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.
Public/Granted literature
- US20080303539A1 Parametric testline with increased test pattern areas Public/Granted day:2008-12-11
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