Invention Grant
- Patent Title: Semiconductor device with pad switch
- Patent Title (中): 半导体器件带垫开关
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Application No.: US11798329Application Date: 2007-05-11
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Publication No.: US07679424B2Publication Date: 2010-03-16
- Inventor: Atsushi Takeuchi
- Applicant: Atsushi Takeuchi
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2006-139056 20060518
- Main IPC: H03K17/00
- IPC: H03K17/00

Abstract:
A semiconductor device includes a pad, an internal power supply line, a pad switch including a MOS transistor to provide an electrically connectable coupling between the internal power supply line and the pad by use of a source-drain channel thereof, and a control circuit configured to control an electrical connection with respect to at least one of a gate node and a back-gate node of the MOS transistor, wherein the control circuit is configured such that at least one of the gate node and the back-gate node is electrically connectable to the pad.
Public/Granted literature
- US20070268061A1 Semiconductor device with pad switch Public/Granted day:2007-11-22
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