Invention Grant
- Patent Title: Transistor antifuse device
- Patent Title (中): 晶体管反熔丝装置
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Application No.: US11039157Application Date: 2005-01-19
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Publication No.: US07679426B2Publication Date: 2010-03-16
- Inventor: Donald W. Schulte , Terry McMahon , David Douglas Hall
- Applicant: Donald W. Schulte , Terry McMahon , David Douglas Hall
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01H37/76
- IPC: H01H37/76 ; H01H85/00
Abstract:
In one embodiment, a method provides a bipolar junction transistor that is coupled to a first power supply. A second power supply is utilized to turn on the bipolar junction transistor. And, the bipolar junction transistor is overdriven.
Public/Granted literature
- US20060160318A1 Transistor antifuse device Public/Granted day:2006-07-20
Information query
