A semiconductor device including a bias voltage generator formed from a junction field effect transistor (JFET). The JFET includes a control gate terminal and a first and a second source/drain terminal. The first and second source/drain terminals can form a first terminal of a p-n junction and the control gate terminal can form a second terminal of the p-n junction. The first terminal of the p-n junction can be provided with a first potential. The second terminal can be left essentially floating to provide a bias voltage. A bias receiving circuit can receive the bias voltage. The bias receiving circuit can be in close proximity on the semiconductor device to the bias voltage generator.