Invention Grant
- Patent Title: Low voltage charge pump
- Patent Title (中): 低压电荷泵
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Application No.: US12290647Application Date: 2008-10-31
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Publication No.: US07679430B2Publication Date: 2010-03-16
- Inventor: Jimmy Fort , Fabrice Siracusa
- Applicant: Jimmy Fort , Fabrice Siracusa
- Applicant Address: US CA San Jose
- Assignee: Atmel Corporation
- Current Assignee: Atmel Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A single pump stage of a multi-stage charge pump couples a first low-voltage NMOS transistor in series with a first low-voltage PMOS transistor between charge transfer capacitors. A second low-voltage NMOS transistor is coupled between the gate and the source of the first NMOS transistor. A second low-voltage PMOS transistor is coupled between the gate and the source of the first PMOS transistor. Respective boost voltages are applied to gates of the first NMOS transistor and the second PMOS transistor to minimize threshold voltage losses. A stabilizing capacitor is connected between the first NMOS transistor and the second PMOS transistor.
Public/Granted literature
- US20090153232A1 Low voltage charge pump Public/Granted day:2009-06-18
Information query
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