Invention Grant
- Patent Title: High frequency circuit, semiconductor device, and high frequency power amplification device
- Patent Title (中): 高频电路,半导体器件和高频功率放大器件
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Application No.: US12118803Application Date: 2008-05-12
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Publication No.: US07679438B2Publication Date: 2010-03-16
- Inventor: Kazuki Tateoka , Masahiko Inamori , Shingo Matsuda , Kazuhiko Ohashi , Haruhiko Koizumi
- Applicant: Kazuki Tateoka , Masahiko Inamori , Shingo Matsuda , Kazuhiko Ohashi , Haruhiko Koizumi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2007-130404 20070516
- Main IPC: H03F3/68
- IPC: H03F3/68

Abstract:
A small, high performance, multifunctional high frequency circuit that is multiband and multimode compatible reduces loss from a switch formed on the output side of a final stage amplification unit. The final stage amplification unit power amplifies an input signal and outputs an amplified signal. A first matching circuit impedance converts the amplified signal input thereto at a first input impedance, and outputs a first impedance-converted signal at a first output impedance. A control unit that generates a control signal denoting signal path selection information. A switch unit selects one of at least two signal paths based on the control signal, passes the first impedance-converted signal at an on impedance through the selected path, and outputs the pass signal. A second matching circuit impedance converts a pass signal input thereto at a second input impedance, and outputs a second impedance-converted signal at a second output.
Public/Granted literature
- US20080284539A1 HIGH FREQUENCY CIRCUIT, SEMICONDUCTOR DEVICE, AND HIGH FREQUENCY POWER AMPLIFICATION DEVICE Public/Granted day:2008-11-20
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