Invention Grant
- Patent Title: Amplification-type CMOS image sensor
- Patent Title (中): 放大型CMOS图像传感器
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Application No.: US11612115Application Date: 2006-12-18
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Publication No.: US07679665B2Publication Date: 2010-03-16
- Inventor: Yoshitaka Egawa , Shinji Ohsawa
- Applicant: Yoshitaka Egawa , Shinji Ohsawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-365051 20051219
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335

Abstract:
Pixels are two-dimensionally arranged into rows and columns in an image sensing region of a solid-state image sensing device, and divided into a plurality of vertical blocks. A vertical signal line is connected to each pixel column. A voltage read out from a pixel is A/D-converted and held in a holding circuit. A vertical block selection circuit outputs a vertical block selection signal in response to a horizontal sync pulse. An intra-block line selection circuit selects one pixel row in one block or simultaneously selects a plurality of pixel rows in one block, in accordance with the selection signal and a signal for setting the number of lines to be selected. A pulse selector circuit supplies a pixel driving pulse signal to a pixel row selected by the intra-block line selection circuit.
Public/Granted literature
- US20070139544A1 AMPLIFICATION-TYPE CMOS IMAGE SENSOR Public/Granted day:2007-06-21
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