Invention Grant
- Patent Title: Surface inspection apparatus and surface inspection method for strained silicon wafer
- Patent Title (中): 应变硅晶片的表面检查装置和表面检查方法
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Application No.: US11908554Application Date: 2007-09-13
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Publication No.: US07679730B2Publication Date: 2010-03-16
- Inventor: Hideaki Takano , Miyuki Shimizu , Takeshi Senda , Koji Izunome , Yoshinori Hayashi , Kazuhiko Hamatani
- Applicant: Hideaki Takano , Miyuki Shimizu , Takeshi Senda , Koji Izunome , Yoshinori Hayashi , Kazuhiko Hamatani
- Applicant Address: JP Kanagawa JP Tokyo
- Assignee: Shibaura Mechatronics Corporation,Covalent Materials Corporation
- Current Assignee: Shibaura Mechatronics Corporation,Covalent Materials Corporation
- Current Assignee Address: JP Kanagawa JP Tokyo
- Agency: Volpe and Koenig P.C.
- Priority: JP2005-093027 20050328
- Main IPC: G01B11/16
- IPC: G01B11/16

Abstract:
An image pickup device disposed in a predetermined position relative to a surface of a strained silicon wafer photographs the surface of the strained silicon wafer in a plurality of rotation angle positions on photographing conditions under which bright lines appearing on the surface of the strained silicon wafer can be photographed, in an environment where a light source device illuminates the surface of the strained silicon wafer which is rotating. A composite image in a predetermined angle position is generated from surface images of the strained silicon wafer in a plurality of rotation angle positions obtained by the image pickup device.
Public/Granted literature
- US20090066933A1 SURFACE INSPECTION APPARATUS AND SURFACE INSPECTION METHOD FOR STRAINED SILICON WAFER Public/Granted day:2009-03-12
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