Invention Grant
US07679951B2 Charge mapping memory array formed of materials with mutable electrical characteristics
有权
电荷映射存储器阵列由具有可变电特性的材料形成
- Patent Title: Charge mapping memory array formed of materials with mutable electrical characteristics
- Patent Title (中): 电荷映射存储器阵列由具有可变电特性的材料形成
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Application No.: US11962976Application Date: 2007-12-21
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Publication No.: US07679951B2Publication Date: 2010-03-16
- Inventor: William S. Wong , Sanjiv Sambandan , Tse Nga Ng , Robert A. Street
- Applicant: William S. Wong , Sanjiv Sambandan , Tse Nga Ng , Robert A. Street
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Marger Johnson & McCollom, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic.A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.
Public/Granted literature
- US20090161409A1 CHARGE MAPPING MEMORY ARRAY FORMED OF MATERIALS WITH MUTABLE ELECTRICAL CHARACTERISTICS Public/Granted day:2009-06-25
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