Invention Grant
US07679953B2 Calibration system for writing and reading multiple states into phase change memory
有权
用于将多个状态写入和读取到相变存储器的校准系统
- Patent Title: Calibration system for writing and reading multiple states into phase change memory
- Patent Title (中): 用于将多个状态写入和读取到相变存储器的校准系统
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Application No.: US12283041Application Date: 2008-09-09
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Publication No.: US07679953B2Publication Date: 2010-03-16
- Inventor: Pantas Sutardja
- Applicant: Pantas Sutardja
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB St. Michael
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory system includes phase change memory cells. A control module causes one of the phase change memory cells to be written using a write parameter, causes a resistance value of the one of the phase change memory cells to be read back, adjusts the write parameter, and causes the writing, reading and adjusting to be repeated until the resistance value is within a predetermined range of a target resistance value.
Public/Granted literature
- US20090010050A1 Calibration system for writing and reading multiple states into phase change memory Public/Granted day:2009-01-08
Information query
