A memory cell MC stores a plurality of bits of data using threshold levels 1, 2, . . . , n (n is a natural number). A storage section stores a plurality of items of parameter data for generating the threshold levels. An arithmetic circuit generates voltage data for generating voltages corresponding to the threshold levels by accumulating the parameter data read from the storage section. A voltage generating circuit generates a voltage on the basis of the voltage data generated by the arithmetic circuit. The arithmetic circuit, when reading data from the memory cell at threshold level k (k