Invention Grant
- Patent Title: Resistive memory including selective refresh operation
- Patent Title (中): 电阻式存储器，包括选择性刷新操作
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Application No.: US11602719Application Date: 2006-11-21
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Publication No.: US07679980B2Publication Date: 2010-03-16
- Inventor: Thomas Happ , Jan Boris Philipp
- Applicant: Thomas Happ , Jan Boris Philipp
- Applicant Address: US NC Cary
- Assignee: Qimonda North America Corp.
- Current Assignee: Qimonda North America Corp.
- Current Assignee Address: US NC Cary
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A memory includes an array of phase change memory cells and a first circuit. The first circuit is for refreshing only memory cells within the array of phase change memory cells that are programmed to non-crystalline states in response to a request for a refresh operation.
Public/Granted literature
- US20080117704A1 Resistive memory including selective refresh operation Public/Granted day:2008-05-22
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