Invention Grant
- Patent Title: Method for fabricating three-dimensional photonic crystal
- Patent Title (中): 制造三维光子晶体的方法
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Application No.: US12330432Application Date: 2008-12-08
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Publication No.: US07680382B2Publication Date: 2010-03-16
- Inventor: Akinari Takagi , Hikaru Hoshi , Kiyokatsu Ikemoto , Kazuya Nobayashi
- Applicant: Akinari Takagi , Hikaru Hoshi , Kiyokatsu Ikemoto , Kazuya Nobayashi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. I.P. Division
- Priority: JP2005-089181 20050325
- Main IPC: G02B6/10
- IPC: G02B6/10

Abstract:
At least one exemplary embodiment is directed to a method for fabricating a three-dimensional photonic crystal. In the method for fabricating the three-dimensional photonic crystal, a plurality of layers can be defined as one unit, and the total thickness of the one unit can be controlled such that an average layer-thickness of the plurality of layers in the one unit is about equal to the ideal layer-thickness so that a photonic band-gap occurs in a desired wavelength region.
Public/Granted literature
- US20090092368A1 METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTAL Public/Granted day:2009-04-09
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