Invention Grant
- Patent Title: Pressure control device for low pressure processing chamber
- Patent Title (中): 低压处理室压力控制装置
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Application No.: US11767547Application Date: 2007-06-25
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Publication No.: US07680563B2Publication Date: 2010-03-16
- Inventor: Naoyuki Kofuji , Hiroshi Akiyama , Masahiro Nagatani
- Applicant: Naoyuki Kofuji , Hiroshi Akiyama , Masahiro Nagatani
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-021692 20070131
- Main IPC: G05D16/00
- IPC: G05D16/00 ; G06F19/00

Abstract:
A control method which quickly adjusts a plasma processing apparatus to a desired pressure regardless of gas type, gas flow rate or target pressure simply by optimizing constants. The plasma processing apparatus includes: gas supply means which supplies processing gas to a low pressure processing chamber; plasma generating means which supplies electromagnetic energy to the processing gas in the low pressure processing chamber and generates plasma; exhaust means which exhausts gas in the low pressure processing chamber; gas pressure measuring means which measures gas pressure in the low pressure processing chamber; exhaust speed adjusting means which adjusts exhaust speed of gas to be exhausted by the exhaust means; and an arithmetic and control unit calculates an exhaust speed to make the gas pressure measured by the pressure measuring means equal to a target value, and controls the exhaust speed adjusting means according to the calculation result.
Public/Granted literature
- US20080183340A1 Pressure Control Device for Low Pressure Processing Chamber Public/Granted day:2008-07-31
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